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Infineon | IPD90R1K2C3ATMA2

Manufacturer Part #

IPD90R1K2C3ATMA2

N-Channel 900 V 5.1 A 83 W Surface Mount CoolMOS Power Transistor - PG-TO252

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2436
Product Specification Section
Infineon IPD90R1K2C3ATMA2 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 900V
Drain-Source On Resistance-Max: 1.2Ω
Rated Power Dissipation: 83W
Qg Gate Charge: 28nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 5.1A
Turn-on Delay Time: 70ns
Turn-off Delay Time: 400ns
Rise Time: 20ns
Fall Time: 40ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 710pF
Series: CoolMOS C3
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,712.50
USD
Quantity
Unit Price
2,500
$0.685
5,000
$0.68
7,500
$0.675
10,000
$0.67
12,500+
$0.66
Product Variant Information section