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  6. IPN60R360P7SATMA1

Infineon | IPN60R360P7SATMA1

Manufacturer Part #

IPN60R360P7SATMA1

Single N-Channel 600 V 360 mOhm 13 nC CoolMOS™ Power Mosfet - SOT-223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPN60R360P7SATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.36Ω
Rated Power Dissipation: 7W
Qg Gate Charge: 13nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 9A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 42ns
Rise Time: 7ns
Fall Time: 10ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Input Capacitance: 555pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$795.00
USD
Quantity
Unit Price
3,000
$0.265
6,000
$0.26
15,000+
$0.255
Product Variant Information section