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Manufacturer Part #

IPP65R310CFDXKSA2

650V 11.4 A 310 mΩ N-ch TO-220

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPP65R310CFDXKSA2 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.31Ω
Rated Power Dissipation: 104.2W
Qg Gate Charge: 41nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 11.4A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 45ns
Rise Time: 7.5ns
Fall Time: 7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: CoolMOS
Input Capacitance: 1100pF
Series: CoolMOS CFD2
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$530.00
USD
Quantity
Unit Price
20
$1.09
75
$1.08
250
$1.06
1,000
$1.05
3,000+
$1.02
Product Variant Information section