Manufacturer Part #
IRF830APBF-BE3
500V,5A,1400MOHM,TO-220 - COO: TAIWAN
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Vishay IRF830APBF-BE3 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Location Change
05/20/2025 Details and Download
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Part Status:
Active
Active
Vishay IRF830APBF-BE3 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 500V |
| Drain-Source On Resistance-Max: | 1.4Ω |
| Rated Power Dissipation: | 74W |
| Qg Gate Charge: | 24nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 5A |
| Turn-on Delay Time: | 10ns |
| Turn-off Delay Time: | 21ns |
| Rise Time: | 21ns |
| Fall Time: | 15ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4.5V |
| Input Capacitance: | 620pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
N/A
Quantity
Unit Price
1,000
$0.685
2,000
$0.675
3,000
$0.67
5,000
$0.665
10,000+
$0.65
Product Variant Information section
Available Packaging
Package Qty:
1000 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole