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Manufacturer Part #
IRF9389TRPBF
Dual N/P-Channel 30 V 27/64 mOhm 6.8/8.1 nC HEXFET® Power Mosfet - SOIC-8
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:4000 per Reel Package Style:SOIC-8 Mounting Method:Surface Mount | ||||||||||
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Infineon IRF9389TRPBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF9389TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/de/p/semiconductors--discretes--transistors--mosfets/irf9389trpbf-infineon-5033810
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IRF9389TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/de/p/semiconductors--discretes--transistors--mosfets/irf9389trpbf-infineon-5033810
Infineon IRF9389TRPBF - Technical Attributes
| Fet Type: | Dual N/P-Ch |
| Drain-to-Source Voltage [Vdss]: | 30V/-30V |
| Drain-Source On Resistance-Max: | 27mΩ/64mΩ |
| Rated Power Dissipation: | 2|W |
| Qg Gate Charge: | 6.8nC/8.1nC |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
4000 per Reel
Package Style:
SOIC-8
Mounting Method:
Surface Mount