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Référence fabricant
IRFR5505TRPBF
Single P-Channel 55 V 0.11 Ohm 32 nC HEXFET® Power Mosfet - TO-252-3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :2000 par Reel Style d'emballage :TO-252-3 (DPAK) Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2540 | ||||||||||
Infineon IRFR5505TRPBF - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Subject:Moisture Barrier Bag and Anti-Static shielding bag elimination for MSL1 devices at Tijuana, Mexico.Reason: Standardization of packing material for MSL1 devices at Tijuana, Mexico.Packing Material and Method:OLD:Moisture Barrier Bag + Humidity Indicator Card + Desiccant + Dry Pack andAnti-Static shielding bag + Dry PackNEW:Reel in packing box without Dry Pack
- Updated information marked in BLUE TYPE- Original PCN N? 2023-092-A dated 2023-01-15 (new: 2024-01-15) Product identification Traceability is assured via Wafer lot number & country of diffusion Country of diffusion: ? United States = Infineon Technologies Temecula? Taiwan = EPISIL Technologies Inc.? Malaysia = Infineon Technologies Kulim
Detailed change information:Subject: Change of the wafer production location from Infineon Technologies Temecula, USA to Infineon Technologies Kulim, Malaysia for dedicated G5 P-Channel MOSFET products.Reason:The wafer production of the affected products will be extended to Infineon Technologies Kulim, according to global Infineon production strategy
Subject Standardization of lot number format.Reason Harmonize and standardize the lot number format across all external production partners.Description: Lot numberOld - Multiple lot number formatsNew - Standardized into a single 11 alphanumeric lot number formatIntended start of delivery 2023-02-10Note: Customers may receive both current and new lot number formats, until existing inventory will be depleted
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFR5505TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/irfr5505trpbf-infineon-6173906
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IRFR5505TRPBF&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/irfr5505trpbf-infineon-6173906
Infineon IRFR5505TRPBF - Caractéristiques techniques
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 0.11Ω |
| Rated Power Dissipation: | 57W |
| Qg Gate Charge: | 32nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 18A |
| Turn-on Delay Time: | 12ns |
| Turn-off Delay Time: | 20ns |
| Rise Time: | 28ns |
| Fall Time: | 16ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 2.39mm |
| Length: | 6.73mm |
| Input Capacitance: | 650pF |
| Style d'emballage : | TO-252-3 (DPAK) |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
2000 par Reel
Style d'emballage :
TO-252-3 (DPAK)
Méthode de montage :
Surface Mount