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Livraison gratuite aux États-Unis continentaux à partir de 50 $ US. Des conditions s'appliquent
Référence fabricant
IXFA3N120
N-Channel 1200 V 4.5 Ohm SMT HiPerFET Power Mosfet - TO-263-3
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| Nom du fabricant: | Littelfuse - IXYS | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-263-3 (D2PAK) Méthode de montage :Through Hole | ||||||||||
| Code de date: | |||||||||||
Littelfuse - IXYS IXFA3N120 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
SUBJECT: Assembled Device Marking Format Changes and Outer Box/Bag Label Format Changes - Change to the assembled device marking format The change affects the date code and tracking number identification. This change does not affect the form, fit or function of the product. See attached for more details - Change to the box label format: The paper sticker label found on the outer box or bag will see a format change that incorporates the Littelfuse logo along with the IXYS logo. The printed information remains the same (PN, Qty, Lot #, date code, country of origin). The change allows for a improved readability. This change does not affect the form, fit or function of the product. REMARKS: This changes from the original IXYS Corporation marking/labeling format to the new IXYS LLC-USA format is being done to conform to the SAP product management system requirements of our parent company Littelfuse Corporation.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IXFA3N120&field4=Littelfuse - IXYS&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/ixfa3n120-littelfuse-ixys-6473201
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IXFA3N120&field4=Littelfuse - IXYS&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/ixfa3n120-littelfuse-ixys-6473201
Littelfuse - IXYS IXFA3N120 - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain-Source On Resistance-Max: | 4.5Ω |
| Rated Power Dissipation: | 200|W |
| Qg Gate Charge: | 39nC |
| Style d'emballage : | TO-263-3 (D2PAK) |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-263-3 (D2PAK)
Méthode de montage :
Through Hole