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Vishay | SIHA6N80AE-GE3

Manufacturer Part #

SIHA6N80AE-GE3

E Series 800 V 5 A 950 mOhm Single N-Channel Power MOSFET - TO-220-3FP

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIHA6N80AE-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 0.950Ω
Rated Power Dissipation: 30W
Qg Gate Charge: 15nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 15A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 16ns
Rise Time: 10ns
Fall Time: 20ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 422pF
Series: E
Package Style:  TO-220FP (TO-220FPAB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$905.00
USD
Quantity
Unit Price
25
$0.97
100
$0.945
300
$0.925
1,000
$0.905
3,000+
$0.86
Product Variant Information section