Manufacturer Part #
SIHG33N60E-GE3
SiHG33N60E Series ±30 V 33 A 278 W Through Hole Power Mosfet - TO-247AC
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:500 per Bulk Package Style:TO-247AC Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Vishay SIHG33N60E-GE3 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Location Change
01/02/2025 Details and Download
Description of Change: To meet increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer back-grind and back-metallization (BGBM) on Super Junction Commercial Power MOSFETs at in-house Siliconix Philippines Inc. (SPI) Facility in Binan, Philippines.Reason for Change: Manufacturing Capacity Expansion
Part Status:
Active
Active
Vishay SIHG33N60E-GE3 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 99mΩ |
| Rated Power Dissipation: | 278|W |
| Qg Gate Charge: | 100nC |
| Package Style: | TO-247AC |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
20 Weeks
Quantity
Unit Price
1
$3.73
20
$3.64
75
$3.59
250
$3.54
1,000+
$3.43
Product Variant Information section
Available Packaging
Package Qty:
500 per Bulk
Package Style:
TO-247AC
Mounting Method:
Through Hole