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Référence fabricant
SIR422DP-T1-GE3
SIR422 Series 40 V 0.0066 Ohm 48 nC Single N-Channel Power Mosfet POWERPAK-SO-8
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| Nom du fabricant: | Vishay | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :3000 par Reel Style d'emballage :POWERPAK-SO-8 Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2307 | ||||||||||
Vishay SIR422DP-T1-GE3 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Description of Change: To meet the increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer BGBM process (Backside-Grind and Backside-Metallization) for commercial Low-Voltage Power MOSFETs at in-house Siliconix Philippines Inc.(SPI) facility in Binan, Philippines.Reason for Change: Capacity Expansion
Cancellation of Future PCN 98543Dear Valued Customer,Please be informed that PCN-SIL-018-2023-REV-1 has been withdrawn.REASON:10-6-23 Per Andrew Tsai: to correct the PCN subjectDescription of Change: To continue the supply of target commercial power MOSFETs, Vishay Siliconix announces the new solder paste, Pb95Sn5, is adopted in PowerPAK? SO-8 and SO-8 package to replace the original material, Pb88Sn10Ag2, for the yield improvement
Cancellation of Future PCN 98474Dear Valued Customer,Please be informed that PCN-SIL-018-2023-REV-0 has been withdrawn.REASON:10-6-23 Per Andrew Tsai: to correct the PCN subjectDescription of Change: To continue the supply of target commercial power MOSFETs, Vishay Siliconix announces the new solder paste, Pb95Sn5, is adopted in PowerPAK? SO-8 and SO-8 package to replace the original material, Pb88Sn10Ag2, for the yield improvement.
Vishay Siliconix Announces New Material of Solder Paste for Commercial Power MOSFETs in PowerPAK? SO-8 and SO-8 Package (update the subject of PCN-SIL-018-2023-REV-0)Description of Change: To continue the supply of target commercial power MOSFETs, Vishay Siliconix announces the new solder paste, Pb95Sn5, is adopted in PowerPAK? SO-8 and SO-8 package to replace the original material, Pb88Sn10Ag2, for the yield improvement.
Description of Change: Due to the fire accident in Jan-2023, the original plating subcon of Vishay Siliconix, Welnew-Wuxi, is suspended and will be entirely replaced by the new site in Shanghai, China (Welnew-Shanghai). This full release of Welnew-Shnaghai applies to commercial product packages with copper lead-frame assembled in Simconix in Shanghai. Welnew-Shanghai was founded in 2006 as a leading provider of Hall sensor products, semiconductor process service, and equipments. Welnew-Shanghai has achieved the certifications, including IATF-16949, ISO-9001, and ISO-14001.Expected Influence on Quality/Reliability/Performance: There will be no effect on quality, reliability, performance, and the minimum/maximum values in the datasheet.Time Schedule:Start Shipment Date: Wed Jul 5, 2023
Description of Change: The wafer plating process for commercial power MOSFET products will move to a new building within the same Laguna Technopark. Classification of Change: In order to increase the capacity, Vishay Siliconix has moved the Philippines wafer plating facility in a larger building with the same equipment, same process, and same personnel.m Expected Influence on Quality/Reliability/Performance: There will be no effect on performance, quality or reliability and no change to form, fit, or function of the shipped devices.Vishay Brand(S): Vishay Siliconix Time Schedule: Start Shipment Date: Mon Feb 6, 2023
PCN UPDATE - FPCN 95348Potential delivery interruption for the selected Power MOSFETs due to the fire accident at Welnew Wuxi factory and the adoption of the alternative site in Vishay Tianjin.Description of Change: This advisory is being provided to you as an announcement that due to the fire accident on 2023/1/6 afternoon at Welnew Wuxi factory (China), the plating subcon of Vishay Siliconix, it?s expected the delivery interruption on specific part types, including TSOP-6, TO-236 (SOT-23), SO-8, PowerPAK 1212-8, Thin PowerPAK 1212-8, PowerPAK SO-8, and 1206-8 ChipFET. The detail part list of each package is attached in the following pages of this advisory.Currently all the production activities in Welnew Wuxi plant have been suspended. Vishay Siliconix is cooperating closely with Welnew to restart the alternative production line in Welnew Shanghai. The necessary equipment setup and qualification is estimated to take up to 5 months to get completed and ready for the normal production in May, 2023.During this period, we expect the delivery interruptions in January and February while these could be caught up by the end of March this year based on current assessment status. Before Welnew Shanghai being ready for production, Vishay Tianjin plant will offer the support as the alternative backup plating site to minimize the impact as more as possible.All the migration plans are kick off and on-going already, including the restart of Welnew Shanghai plant and the alternative plating process inVishay Tianjin plant.
This advisory is being provided to you as an announcement that due to the fire accident on 2023/1/6 afternoon at Welnew Wuxi factory (China), the plating subcon of Vishay Siliconix, it's expected the delivery interruption on specific part types, including TSOP-6, TO-236 (SOT-23), SO-8, PowerPAK 1212-8, Thin PowerPAK 1212-8, PowerPAK SO-8, and 1206-8 ChipFET.Currently all the production activities in Welnew Wuxi plant have been suspended. Vishay Siliconix is cooperating closely with Welnew to restart the alternative production line in Welnew Shanghai. The necessary equipment setup and qualification is estimated to take up to 5 months to get completed and ready for the normal production in May, 2023.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SIR422DP-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/sir422dp-t1-ge3-vishay-4570743
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=SIR422DP-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--discretes--transistors--mosfets/sir422dp-t1-ge3-vishay-4570743
Vishay SIR422DP-T1-GE3 - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 0.0066Ω |
| Rated Power Dissipation: | 34.7|W |
| Qg Gate Charge: | 48nC |
| Style d'emballage : | POWERPAK-SO-8 |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
3000 par Reel
Style d'emballage :
POWERPAK-SO-8
Méthode de montage :
Surface Mount