text.skipToContent text.skipToNavigation

Manufacturer Part #

SIRA24DP-T1-GE3

N-Channel 25 V 1.4 mOhm 62.5 W TrenchFET Gen IV Mosfet - PowerPAK SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2238
Product Specification Section
Vishay SIRA24DP-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 25V
Drain-Source On Resistance-Max: 1.4mΩ
Rated Power Dissipation: 5W
Qg Gate Charge: 36.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 44.5A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 18ns
Rise Time: 23ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.1V
Input Capacitance: 2650pF
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
3,000
USA:
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
48 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$1,020.00
USD
Quantity
Unit Price
3,000
$0.34
9,000
$0.335
15,000+
$0.33
Product Variant Information section