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Infineon | SPD03N60C3ATMA1

Manufacturer Part #

SPD03N60C3ATMA1

N-Channel 600 V 3.2 A 38 W SMT Power Transistor MOSFET - PG-TO-252-3-1

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2527
Product Specification Section
Infineon SPD03N60C3ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 1.4Ω
Rated Power Dissipation: 38W
Qg Gate Charge: 13nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3.2A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 64ns
Rise Time: 3ns
Fall Time: 12ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 400pF
Series: CoolMOS C3
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,025.00
USD
Quantity
Unit Price
2,500
$0.41
5,000
$0.405
7,500
$0.40
12,500+
$0.39
Product Variant Information section