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Infineon | SPP18P06PHXKSA1

Manufacturer Part #

SPP18P06PHXKSA1

Single P-Channel 60 V 130 mOhm 21 nC SIPMOS® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon SPP18P06PHXKSA1 - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 130mΩ
Rated Power Dissipation: 81.1|W
Qg Gate Charge: 21nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 18.7A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 25ns
Rise Time: 5.8ns
Fall Time: 11ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.7V
Input Capacitance: 690F
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$342.50
USD
Quantity
Unit Price
50
$0.685
1,500
$0.67
2,500
$0.665
5,000
$0.655
10,000+
$0.64
Product Variant Information section