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Manufacturer Part #

STP90N6F6

Single N-Channel 60 V 136 W 74.9 nC Silicon Through Hole Mosfet - TO-220-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1515
Product Specification Section
STMicroelectronics STP90N6F6 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.0063Ω
Rated Power Dissipation: 136W
Qg Gate Charge: 74.9nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 90A
Turn-on Delay Time: 22ns
Turn-off Delay Time: 73ns
Rise Time: 42ns
Fall Time: 16ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 9.15mm
Length: 10.4mm
Input Capacitance: 4295pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
970
USA:
970
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1.08
USD
Quantity
Unit Price
1
$1.08
40
$1.06
200
$1.05
750
$1.03
3,000+
$1.00
Product Variant Information section