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STMicroelectronics | STP9NM60N

Manufacturer Part #

STP9NM60N

Single N-Channel 600 V 0.7 Ohm 17.4 nC 70 W MDmesh™ II Power MOSFET -TO-220-3

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Mfr. Name: STMicroelectronics
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Product Specification Section
STMicroelectronics STP9NM60N - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.7Ω
Rated Power Dissipation: 70|W
Qg Gate Charge: 17.4nC
Package Style:  TO-220-3 (TO-220AB)
Features & Applications

The STP9NM60N is a N-Channel MDmesh™ II Power MOSFET. This series of devices is realized with the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features:

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1000
Multiple Of:
50
Total
$1,140.00
USD
Quantity
Unit Price
50
$1.17
200
$1.15
750
$1.14
2,000
$1.13
5,000+
$1.11
Product Variant Information section