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Manufacturer Part #
SCT2280KEGC11
1200 V 14A 108W Through Hole N-Channel SiC Power MOSFET - TO-247N
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| Mfr. Name: | ROHM | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Tube Package Style:TO-247-3 Mounting Method:Through Hole | ||||||||||
| Date Code: | 2523 | ||||||||||
Product Specification Section
ROHM SCT2280KEGC11 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
Part Status:
Obsolete
Obsolete
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SCT2280KEGC11&field4=ROHM&field18=https://p1na.futureelectronics.com/de/p/semiconductors--discretes--transistors--silicon-carbide-mosfets-sic-mosfets/sct2280kegc11-rohm-4150947
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SCT2280KEGC11&field4=ROHM&field18=https://p1na.futureelectronics.com/de/p/semiconductors--discretes--transistors--silicon-carbide-mosfets-sic-mosfets/sct2280kegc11-rohm-4150947
ROHM SCT2280KEGC11 - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 22A |
| Input Capacitance: | 1200pF |
| Power Dissipation: | 165W |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
26 Weeks
Quantity
Unit Price
30
$8.11
90
$8.05
150
$8.02
600
$7.95
900+
$7.90
Product Variant Information section
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-247-3
Mounting Method:
Through Hole