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Référence fabricant
S70GL02GS12FHIV10
FLASH - NOR Memory IC 2Gb (256M x 8, 128M x 16) Parallel 120ns 64-FBGA (11x13)
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :180 par Tray Style d'emballage :FBGA-64 Méthode de montage :Surface Mount | ||||||||||
| Code de date: | |||||||||||
Infineon S70GL02GS12FHIV10 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change information:Change of lot naming convention in Infineon Technologies (Thailand) Limited, Nonthaburi, Thailand for subject memory productsReason:The lot numbering identification changing from 10 digit to 11 digit for whole Bangkok site according to the global Infineon standardlot numbering system manufacturing strategy.
Detailed change information:Change of lot naming convention in Infineon Technologies (Thailand) Limited, Nonthaburi, Thailand for subject memory productsReason:The lot numbering identification changing from 10 digit to 11 digit for whole Bangkok site according to the global Infineon standardlot numbering system manufacturing strategy.
Detailed change informationSubject:Change of wire bond from Au to CuPdAu for products S70GL02GS1x, S71KL512SC0BHV00x and S99GL02GS12FHIV20 and halogen free label updated for products S70GL02GS1x.Reason/Motivation:To harmonization of bond wire usage in back end Bangkok site. AuPdCu wire enables superior electrical, thermal and reliability performance, making it an excellent interconnect solution for packaging. S70GL02GS1x affected product labels are being updated to correctly reflect that they are halogen free.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=S70GL02GS12FHIV10&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--memory--flash--norflash--nor/s70gl02gs12fhiv10-infineon-6119186
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=S70GL02GS12FHIV10&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/de/p/semiconductors--memory--flash--norflash--nor/s70gl02gs12fhiv10-infineon-6119186
Infineon S70GL02GS12FHIV10 - Caractéristiques techniques
| Memory Density: | 2b |
| Memory Organization: | 128M x 16 |
| Supply Voltage-Nom: | 2.7V to 3.6V |
| Temperature Grade: | Industrial |
| Speed: | 120ns |
| Number of Words: | 128M |
| Word Length: | 16b |
| Interface: | Parallel |
| Operating Temp Range: | -40°C to +85°C |
| Moisture Sensitivity Level: | 3 |
| Style d'emballage : | FBGA-64 |
| Méthode de montage : | Surface Mount |
Emballages disponibles
Qté d'emballage(s) :
180 par Tray
Style d'emballage :
FBGA-64
Méthode de montage :
Surface Mount