Manufacturer Part #
IPD053N08N3GATMA1
Single N-Channel 80 V 5.3 mOhm 52 nC OptiMOS™ Power Mosfet - TO-252-3
Product Specification Section
  Infineon IPD053N08N3GATMA1 - Product Specification
Shipping Information:
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	Item cannot ship to following countries: 
	ECCN:
EAR99
	PCN Information:
	N/A	
		File	
		Date	
	Part Status:
	Active	
		Active 
	Infineon IPD053N08N3GATMA1 - Technical Attributes
Attributes Table
	| Fet Type: | N-Ch | 
| No of Channels: | 1 | 
| Drain-to-Source Voltage [Vdss]: | 80V | 
| Drain-Source On Resistance-Max: | 5.3mΩ | 
| Rated Power Dissipation: | 150|W | 
| Qg Gate Charge: | 52nC | 
| Gate-Source Voltage-Max [Vgss]: | 20V | 
| Drain Current: | 90A | 
| Turn-on Delay Time: | 18ns | 
| Turn-off Delay Time: | 38ns | 
| Rise Time: | 66ns | 
| Fall Time: | 10ns | 
| Operating Temp Range: | -55°C to +175°C | 
| Gate Source Threshold: | 2.8V | 
| Technology: | OptiMOS | 
| Input Capacitance: | 3570pF | 
| Package Style: | TO-252-3 (DPAK) | 
| Mounting Method: | Surface Mount | 
Pricing Section
 Global Stock:
 0
  USA: 
 0
 On Order:
 0
 Factory Lead Time:
 26 Weeks
  Quantity
  Unit Price
  2,500+
  $1.65
 Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount