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Manufacturer Part #
SIZF5300DT-T1-GE3
30 V 35 A 1480 pF Surface Mount Dual N-Channel MOSFET -PowerPAIR® 3x3FS
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:3000 per Reel Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2338 | ||||||||||
Vishay SIZF5300DT-T1-GE3 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description of Change: To meet increasing demand with more flexibility for power MOSFETs, Vishay Siliconix is announcing to expand the assembly and test capacity for LVM Commercial MOSFETs to partner United Test and Assembly Center Ltd. (UTAC). UTAC has been a subcontracting partner of Vishay Siliconix. Founded in 1997, UTAC is a leading independent provider of assembly and test services for a broad range of semiconductor products in analog, mixed-signal and logic, and memory. UTAC locates in Bangkok, Thailand, and has achieved the certifications, including IATF-16949, ISO-9001, ISO-26262, ISO-45001, and ISO-14001. Reason for Change: Manufacturing capacity expansionTime Schedule: Start Shipment Date: Thursday January 1, 2026
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
Vishay Siliconix Announces Manufacturing Capacity Expansion of BGBM Wafer Process for Commercial Power MOSFETs in PowerPAIR? PackagesDescription of Change: To meet increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer back-grind and back-metallization (BGBM) on select Commercial Power MOSFET in PowerPAIR? 3x3, PowerPAIR? 3x3FS, PowerPAIR? 6x5, and PowerPAIR? 6x5F packages at Prosperity Power Technology Inc.. ProPowertek, founded at the Hsinchu Science Park in Nov?20, aims to provide customers with engineering services for the center and backend wafer making process, and is devoted to leading the world in this market. ProPowertek is focusing on wafer thinning engineering, front side metal (FSM), backside grinding backside metal (BGBM), and IGBT back-end Turnkey solution in the local IC industry chain.
Description of Change: The wafer plating process for commercial power MOSFET products will move to a new building within the same Laguna Technopark. Classification of Change: In order to increase the capacity, Vishay Siliconix has moved the Philippines wafer plating facility in a larger building with the same equipment, same process, and same personnel.m Expected Influence on Quality/Reliability/Performance: There will be no effect on performance, quality or reliability and no change to form, fit, or function of the shipped devices.Vishay Brand(S): Vishay Siliconix Time Schedule: Start Shipment Date: Mon Feb 6, 2023
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SIZF5300DT-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/en/p/semiconductors--discretes--transistors--mosfets/sizf5300dt-t1-ge3-vishay-6168907
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SIZF5300DT-T1-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/en/p/semiconductors--discretes--transistors--mosfets/sizf5300dt-t1-ge3-vishay-6168907
Vishay SIZF5300DT-T1-GE3 - Technical Attributes
| Product Status: | Active |
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 2.43mΩ |
| Rated Power Dissipation: | 4.5W |
| Qg Gate Charge: | 21nC |
| Gate-Source Voltage-Max [Vgss]: | 16V |
| Drain Current: | 35A |
| Turn-on Delay Time: | 12ns |
| Turn-off Delay Time: | 25ns |
| Rise Time: | 8ns |
| Fall Time: | 6ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2V |
| Input Capacitance: | 1480pF |
| Series: | TrenchFET® Gen V |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
3000 per Reel
Mounting Method:
Surface Mount