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Manufacturer Part #

NTH4L030N120M3S

N-Channel 1200 V 73 A 313 W Through Hole Silicon Carbide MOSFET - TO-247-4L

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi NTH4L030N120M3S - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 73A
Input Capacitance: 2430pF
Power Dissipation: 313W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Singapore:
0
On Order:
0
Factory Stock:Factory Stock:
310,950
Factory Lead Time:
18 Weeks
Minimum Order:
450
Multiple Of:
450
Total
$3,204.00
USD
Quantity
Unit Price
4
$7.41
20
$7.32
50
$7.27
125
$7.23
300+
$7.12
Product Variant Information section