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Infineon | BSC050N03LSGATMA1

Manufacturer Part #

BSC050N03LSGATMA1

Single N-Channel 30 V 7.5 mOhm 17 nC OptiMOS™ Power Mosfet - TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSC050N03LSGATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 7.5mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 17nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 80A
Turn-on Delay Time: 5.2ns
Turn-off Delay Time: 21ns
Rise Time: 4ns
Fall Time: 3.6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.2V
Technology: OptiMOS
Height - Max: 1.1mm
Length: 5.49mm
Input Capacitance: 2100pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,200.00
USD
Quantity
Unit Price
5,000
$0.24
20,000+
$0.235
Product Variant Information section