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Infineon | BSZ097N10NS5ATMA1

Manufacturer Part #

BSZ097N10NS5ATMA1

BSZ097xx Series 100 V 40 A 9.7 mOhm OptiMOS™5 Power-MOSFET - TSDSON-8 FL

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSZ097N10NS5ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 9.7mΩ
Rated Power Dissipation: 2.1W
Qg Gate Charge: 22nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 40A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 21ns
Rise Time: 5ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 1600pF
Package Style:  TSDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$3,350.00
USD
Quantity
Unit Price
5,000
$0.67
10,000+
$0.655
Product Variant Information section