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Diodes Incorporated | DMN2053UVT-7

Manufacturer Part #

DMN2053UVT-7

DMN2053 Series 20 V 4.6 A 35 mOhm Dual N-Channel MOSFET - TSOT-26

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN2053UVT-7 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 35mΩ
Rated Power Dissipation: 1.1W
Qg Gate Charge: 3.6nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 4.6A
Turn-on Delay Time: 2.6ns
Turn-off Delay Time: 12.5ns
Rise Time: 3ns
Fall Time: 3.6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 400mV
Technology: Si
Input Capacitance: 369pF
Package Style:  TSOT-26
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$266.40
USD
Quantity
Unit Price
3,000
$0.0888
9,000
$0.0866
15,000
$0.0856
45,000
$0.0835
75,000+
$0.0817
Product Variant Information section