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Manufacturer Part #

IPD200N15N3GATMA1

Single N-Channel 150 V 20 mOhm 23 nC OptiMOS™ Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD200N15N3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 20mΩ
Rated Power Dissipation: 150W
Qg Gate Charge: 23nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 50A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 23ns
Rise Time: 11ns
Fall Time: 6ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Height - Max: 2.3mm
Length: 6.5mm
Input Capacitance: 1820pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,850.00
USD
Quantity
Unit Price
2,500
$0.74
5,000
$0.73
7,500
$0.725
10,000+
$0.715
Product Variant Information section