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  6. IPD26N06S2L35ATMA2

Infineon | IPD26N06S2L35ATMA2

Manufacturer Part #

IPD26N06S2L35ATMA2

Single N-Channel 55 V 35 mOhm 24 nC OptiMOS™ Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD26N06S2L35ATMA2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 35mΩ
Rated Power Dissipation: 68W
Qg Gate Charge: 10nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 30A
Turn-on Delay Time: 5ns
Turn-off Delay Time: 26ns
Rise Time: 18ns
Fall Time: 11ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.6V
Technology: OptiMOS
Input Capacitance: 621pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$887.50
USD
Quantity
Unit Price
2,500
$0.355
7,500
$0.35
12,500+
$0.34
Product Variant Information section