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Infineon | IPD50R3K0CEAUMA1

Manufacturer Part #

IPD50R3K0CEAUMA1

IPD50R3K0CE: 500 V 1.7 A 3 Ohm SMT CoolMOS CE Power Transistor - PG-TO252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD50R3K0CEAUMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 3Ω
Rated Power Dissipation: 26|W
Qg Gate Charge: 4.3nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2.6A
Turn-on Delay Time: 7.3ns
Turn-off Delay Time: 23ns
Rise Time: 5.8ns
Fall Time: 49ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Height - Max: 2.41mm
Length: 6.73mm
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$420.00
USD
Quantity
Unit Price
2,500
$0.168
7,500
$0.165
10,000
$0.164
25,000
$0.162
37,500+
$0.159
Product Variant Information section