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Manufacturer Part #

IPD60R800CEAUMA1

Single N-Channel 600 V 800 mOhm 17.2 nC CoolMOS™ Power Mosfet - DPAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD60R800CEAUMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 800mΩ
Rated Power Dissipation: 48|W
Qg Gate Charge: 17.2nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$750.00
USD
Quantity
Unit Price
2,500
$0.30
5,000
$0.295
12,500
$0.29
25,000+
$0.285
Product Variant Information section