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Infineon | IPG20N04S4L11AATMA1

Manufacturer Part #

IPG20N04S4L11AATMA1

IPG20N04S4L Series 40 V 12 A 11.6 Ohm OptiMOS™-T2 Power-Transistor-PG-TDSON-8-10

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPG20N04S4L11AATMA1 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 11.6mΩ
Rated Power Dissipation: 41W
Qg Gate Charge: 20nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 20A
Turn-on Delay Time: 5ns
Turn-off Delay Time: 25ns
Rise Time: 2ns
Fall Time: 15ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.7V
Technology: OptiMOS
Input Capacitance: 1530pF
Package Style:  TDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$2,375.00
USD
Quantity
Unit Price
5,000
$0.475
10,000
$0.47
15,000+
$0.465
Product Variant Information section