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Infineon | IRFB4020PBF

Manufacturer Part #

IRFB4020PBF

Single N-Channel 200 V 100 mOhm 29 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2442
Product Specification Section
Infineon IRFB4020PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 100mΩ
Rated Power Dissipation: 100W
Qg Gate Charge: 29nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 18A
Turn-on Delay Time: 7.8ns
Turn-off Delay Time: 16ns
Rise Time: 12ns
Fall Time: 6.3ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.9V
Technology: Si
Height - Max: 9.02mm
Length: 10.66mm
Input Capacitance: 1200pF
Package Style:  TO-220-3 (TO-220AB)
Pricing Section
Global Stock:
1,000
USA:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$30.25
USD
Quantity
Unit Price
50
$0.605
250
$0.585
1,250
$0.57
2,500
$0.56
7,500+
$0.54
Product Variant Information section