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Infineon | IRFS3207TRLPBF

Manufacturer Part #

IRFS3207TRLPBF

Single N-Channel 75 V 4.5 mOhm 260 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFS3207TRLPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 75V
Drain-Source On Resistance-Max: 4.5mΩ
Rated Power Dissipation: 330W
Qg Gate Charge: 180nC
Gate-Source Voltage-Max [Vgss]: 20V
Turn-on Delay Time: 29ns
Turn-off Delay Time: 68ns
Rise Time: 120ns
Fall Time: 74ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Input Capacitance: 7600pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
11 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$944.00
USD
Quantity
Unit Price
800
$1.18
1,600
$1.17
2,400
$1.16
4,000+
$1.15
Product Variant Information section