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Manufacturer Part #

IXTH26N60P

N-Channel 600 V 270 mOhm Enhancement Mode Power MOSFET - TO-247

ECAD Model:
Mfr. Name: Littelfuse - IXYS
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Littelfuse - IXYS IXTH26N60P - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 270mΩ
Rated Power Dissipation: 460|W
Qg Gate Charge: 72nC
Package Style:  TO-247-3
Mounting Method: Flange Mount
Features & Applications

The IXTH26N60P is a 600 V 26 A N-Channel Enchancement Mode Power MOSFET available in TO-247-3 Package.

Features:

  • Fast Recovery diode
  • Unclamped Inductive Switching (UIS) rated
  • International standard packages
  • Low package inductance - easy to drive and to protect

Advantages:

  • Easy to Mount
  • Space Savings
  • High Power Density
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
27 Weeks
Minimum Order:
300
Multiple Of:
30
Total
$1,617.00
USD
Quantity
Unit Price
30
$5.47
90
$5.43
300
$5.39
600
$5.37
1,200+
$5.32
Product Variant Information section