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Manufacturer Part #

RH6L040BGTB1

60V 65A 7.1OHM N-CH HSMT8 Power MOSFET

ECAD Model:
Mfr. Name: ROHM
Standard Pkg:
Product Variant Information section
Date Code: 2531
Product Specification Section
ROHM RH6L040BGTB1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 7.1mΩ
Rated Power Dissipation: 59W
Qg Gate Charge: 18.8nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 65A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 45ns
Rise Time: 9.5ns
Fall Time: 8ns
Gate Source Threshold: 2.5V
Input Capacitance: 1320pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
3,000
USA:
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
21 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,925.00
USD
Quantity
Unit Price
3,000
$0.975
6,000+
$0.95
Product Variant Information section