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Manufacturer Part #
SIHG47N60EF-GE3
MOSFET N-CHANNEL 600V EF SERIES
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:500 per Box Package Style:TO-247AC Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Vishay SIHG47N60EF-GE3 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
Description of Change: To meet increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer back-grind and back-metallization (BGBM) on Super Junction Commercial Power MOSFETs at in-house Siliconix Philippines Inc. (SPI) Facility in Binan, Philippines.Reason for Change: Manufacturing Capacity Expansion
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SIHG47N60EF-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/es/p/semiconductors--discretes--transistors--mosfets/sihg47n60ef-ge3-vishay-9061404
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SIHG47N60EF-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/es/p/semiconductors--discretes--transistors--mosfets/sihg47n60ef-ge3-vishay-9061404
Vishay SIHG47N60EF-GE3 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 65mΩ |
| Rated Power Dissipation: | 379|W |
| Qg Gate Charge: | 152nC |
| Package Style: | TO-247AC |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
500 per Box
Package Style:
TO-247AC
Mounting Method:
Through Hole