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Manufacturer Part #

SPP20N60S5XKSA1

Single N-Channel 600 V 190 mOhm 79 nC CoolMOS™ Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon SPP20N60S5XKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 190mΩ
Rated Power Dissipation: 208|W
Qg Gate Charge: 79nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 20A
Turn-on Delay Time: 120ns
Turn-off Delay Time: 140ns
Rise Time: 25ns
Fall Time: 30ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4.5V
Technology: CoolMOS
Input Capacitance: 3000pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$1,045.00
USD
Quantity
Unit Price
50
$2.13
200
$2.09
750
$2.06
1,250
$2.05
2,500+
$2.02
Product Variant Information section