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STMicroelectronics | STW50N65DM2AG

Manufacturer Part #

STW50N65DM2AG

N-Channel 650 V 0.087 Ohm Automotive-Grade MDmesh™ DM2 Power Mosfet - TO-247

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STW50N65DM2AG - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 87mΩ
Rated Power Dissipation: 300W
Qg Gate Charge: 70nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 38A
Turn-on Delay Time: 22.5ns
Turn-off Delay Time: 89ns
Rise Time: 21ns
Fall Time: 10.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 3200pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
20 Weeks
Minimum Order:
600
Multiple Of:
600
Total
$2,136.00
USD
Quantity
Unit Price
600
$3.56
1,200
$3.54
1,800
$3.52
2,400+
$3.50
Product Variant Information section