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Taiwan Semiconductor | TQM033NB04CR RLG

Manufacturer Part #

TQM033NB04CR RLG

N-Channel 40 V 121 A 107 W Surface Mount Power MOSFET - PDFN56-8

ECAD Model:
Mfr. Name: Taiwan Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2430
Product Specification Section
Taiwan Semiconductor TQM033NB04CR RLG - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 3.3mΩ
Rated Power Dissipation: 107W
Qg Gate Charge: 87nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 121A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 49ns
Rise Time: 24ns
Fall Time: 23ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.5V
Technology: TrenchMOS
Input Capacitance: 4917pF
Package Style:  PDFN56U
Mounting Method: Surface Mount
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,775.00
USD
Quantity
Unit Price
2,500
$0.71
5,000
$0.70
7,500
$0.695
10,000+
$0.685
Product Variant Information section