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  5. Silicon Carbide MOSFETs (SiC MOSFETs)
  6. IMW65R027M1HXKSA1

Infineon | IMW65R027M1HXKSA1

Manufacturer Part #

IMW65R027M1HXKSA1

Single N-Channel 650 V 47 A 189 W CoolSiC™ Through Hole Mosfet - TO-247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2444
Product Specification Section
Infineon IMW65R027M1HXKSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 47A
Input Capacitance: 2131pF
Power Dissipation: 189W
Operating Temp Range: -55°C to +150°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
240
USA:
240
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$208.80
USD
Quantity
Unit Price
30
$6.96
90
$6.91
150
$6.88
600
$6.82
900+
$6.78
Product Variant Information section