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STMicroelectronics | SCT027W65G3-4AG

Manufacturer Part #

SCT027W65G3-4AG

Automotive silicon carbide Power MOSFET, 650V, 45 A

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2536
Product Specification Section
STMicroelectronics SCT027W65G3-4AG - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 60A
Input Capacitance: 1229pF
Power Dissipation: 313W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
600
USA:
600
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
17 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$212.10
USD
Quantity
Unit Price
30
$7.07
90
$7.02
150
$6.99
600
$6.93
900+
$6.88
Product Variant Information section