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Manufacturer Part #
SCT4018KEC11
1200 V 81A 312W Through Hole N-Channel SiC Power MOSFET-TO-247N
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| Mfr. Name: | ROHM | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Tube Package Style:TO-247-3 Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
ROHM SCT4018KEC11 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SCT4018KEC11&field4=ROHM&field18=https://p1na.futureelectronics.com/es/p/semiconductors--discretes--transistors--silicon-carbide-mosfets-sic-mosfets/sct4018kec11-rohm-6161358
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SCT4018KEC11&field4=ROHM&field18=https://p1na.futureelectronics.com/es/p/semiconductors--discretes--transistors--silicon-carbide-mosfets-sic-mosfets/sct4018kec11-rohm-6161358
ROHM SCT4018KEC11 - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 81A |
| Input Capacitance: | 4532pF |
| Power Dissipation: | 312W |
| Operating Temp Range: | 175°C |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
30 Weeks
Quantity
Unit Price
30
$20.69
60
$20.58
120
$20.47
150
$20.44
450+
$20.22
Product Variant Information section
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-247-3
Mounting Method:
Through Hole