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Diodes Incorporated


Diodes Incorporated DMWS120H100SM4 N-Channel MOSFET

First SiC 1200V N-Channel Silicon Carbide Power MOSFET in TO247-4 Package Enables Higher Power Density

Diodes Incorporated’s DMWS120H100SM4 is a 1200V, industrial-compliant, N-channel MOSFET— and is the first product to be released with a silicon carbide (SiC) chip material in the TO247-4 package.

It enables high density and efficiency in industrial motor drivers, photovoltaic energy systems, DC-DC converters, and power supplies for data centers and telecoms.

This device’s low RDS(ON), coupled with a low Qg at 15V gate drive of 52nC, enables system designers to maximize efficiency while ensuring power dissipation is kept to a minimum.

The TO247-4 package includes an additional Kelvin-sensing pin in the fourth lead that connects to the source and provides the ability to optimize switching performance.

This SiC MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

The DMWS120H100SM4 is AEC-Q101 qualified, manufactured in IATF 16949 certified facilities, and rated to +150°C TJ.


  • Low On-Resistance
  • High BVDSS Rating for Power Application
  • Low Input Capacitance
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/


  • Data center and telecom power supplies
  • Industrial motor drives
  • DC-DC converters
  • Solar inverters
  • EV battery chargers

Typical Application

Diodes Incorporated — DMWS120H100SM4 Typical Application