Manufacturer Part #
FCPF11N60
Single N-Channel 600 V 36 W 52 nC Silicon Through Hole Mosfet - TO-220F
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:1000 per Tube Package Style:TO-220F Mounting Method:Through Hole |
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Product Specification Section
onsemi FCPF11N60 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 0.38Ω |
| Rated Power Dissipation: | 36W |
| Qg Gate Charge: | 52nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 11A |
| Turn-on Delay Time: | 34ns |
| Turn-off Delay Time: | 119ns |
| Rise Time: | 205ns |
| Fall Time: | 120ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 5V |
| Technology: | Si |
| Height - Max: | 16.3mm |
| Length: | 10.67mm |
| Input Capacitance: | 1148pF |
| Package Style: | TO-220F |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
14 Weeks
Quantity
Unit Price
1,000
$0.945
2,000
$0.93
3,000
$0.92
4,000
$0.915
5,000+
$0.90
Product Variant Information section
Available Packaging
Package Qty:
1000 per Tube
Package Style:
TO-220F
Mounting Method:
Through Hole