Les commandes expédiées à l’extérieur des États-Unis seront en attente pendant que l’entreprise évalue les impacts tarifaires.Veuillez contacter votre vendeur pour obtenir de l’aide.
Livraison gratuite aux États-Unis continentaux à partir de 50 $ US. Des conditions s'appliquent
Référence fabricant
2N5416S
Trans GP BJT PNP 300V 1A 3-Pin TO-39
| | |||||||||||
| | |||||||||||
| Nom du fabricant: | Microchip | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :1 par Bulk Style d'emballage :TO-39 Méthode de montage :Through Hole | ||||||||||
| Code de date: | |||||||||||
Microchip 2N5416S - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
PCN Status:Final NotificationDescription of Change:Qualification of MP3B as a new assembly site for selected Microsemi HRDS Metal Can products.Reason for Change:To improve on-time delivery performance by qualifying MP3B as new assembly site.Change Implementation Status:In ProgressEstimated First Ship Date:June 3, 2024 (date code: 2423)
Revision History:January 23, 2024: Issued initial notification.January 31, 2024: Re-issued initial notification to update product description from glass products to metal can products. Description of Change:Qualification of MP3B as a new assembly site for selected Microsemi HRDS Metal Can products.Reason for Change:To improve on-time delivery performance by qualifying MP3B as new assembly site.
Revision History:January 23, 2024: Issued initial notification.January 31, 2024: Re-issued initial notification to update product description from glass products to metal can products. Description of Change:Qualification of MP3B as a new assembly site for selected Microsemi HRDS Metal Can products.Reason for Change:To improve on-time delivery performance by qualifying MP3B as new assembly site.
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=2N5416S&field4=Microchip&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--bipolar-transistors/2n5416s-microchip-6081501
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=2N5416S&field4=Microchip&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--bipolar-transistors/2n5416s-microchip-6081501
Microchip 2N5416S - Caractéristiques techniques
| Product Status: | Active |
| Polarity: | PNP |
| Type: | Power Transistor |
| CE Voltage-Max: | 300V |
| Collector Current Max: | 1A |
| Power Dissipation-Tot: | 750mW |
| Collector - Base Voltage: | 350V |
| Collector - Emitter Saturation Voltage: | 2V |
| Emitter - Base Voltage: | 6V |
| DC Current Gain-Min: | 30 |
| Collector - Current Cutoff: | 50µA |
| Configuration: | Single |
| Operating Temp Range: | -65°C to +200°C |
| Style d'emballage : | TO-39 |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
1 par Bulk
Style d'emballage :
TO-39
Méthode de montage :
Through Hole