Référence fabricant
MJE171G
MJE Series 80 V 3 A PNP Complementary Plastic Silicon Power Transistor TO-225
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| Nom du fabricant: | onsemi | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :500 par Bag Style d'emballage :TO-225 (TO-126, SOT-32) Méthode de montage :Through Hole | ||||||||||
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Product Specification Section
onsemi MJE171G - Spécifications du produit
Informations de livraison:
L'article ne peut être envoyé à certains pays. Voir la liste
L'article ne peut pas être envoyé aux pays suivants:
ECCN:
EAR99
Informations PCN:
N/A
Fichier
Date
Statut du produit:
Actif
Actif
onsemi MJE171G - Caractéristiques techniques
Attributes Table
| Polarity: | PNP |
| Type: | Power Transistor |
| CE Voltage-Max: | 80V |
| Collector Current Max: | 3A |
| Power Dissipation-Tot: | 12.5W |
| DC Current Gain-Min: | 50 |
| Style d'emballage : | TO-225 (TO-126, SOT-32) |
| Méthode de montage : | Through Hole |
Fonctionnalités et applications
The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. The MJE170, MJE171, MJE172 (PNP); MJE180, MJE181, MJE182 (NPN) are complementary devices.
Features:
- Collector-Emitter Sustaining Voltage
- VCEO(sus) = 60 Vdc - MJE171, MJE181
- VCEO(sus) = 80 Vdc - MJE172, MJE182
- DC Current Gain
- hFE = 30 (Min) @ IC = 0.5 Adc
- hFE = 12 (Min) @ IC = 1.5 Adc
- Current-Gain - Bandwidth Product
- fT = 50 MHz (Min) @ IC = 100 mAdc
- Annular Construction for Low Leakages
- ICBO = 100 nA (Max) @ Rated VCB
- Pb-Free Packages are Available
Learn more about the MJE1 family of Bipolar Transistors
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Délai d'usine :
16 Semaines
Quantité
Prix unitaire
500
$0.36
1 000
$0.355
1 500
$0.35
2 500
$0.345
5 000+
$0.34
Product Variant Information section
Emballages disponibles
Qté d'emballage(s) :
500 par Bag
Style d'emballage :
TO-225 (TO-126, SOT-32)
Méthode de montage :
Through Hole