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Infineon | BSC0901NSIATMA1

Manufacturer Part #

BSC0901NSIATMA1

30V, 100A, 2mohm, N-Channel, SuperSO8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon BSC0901NSIATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 2mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 20nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 28A
Turn-on Delay Time: 5ns
Turn-off Delay Time: 27ns
Rise Time: 7.2ns
Fall Time: 4.6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.2V
Input Capacitance: 2600pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$3,400.00
USD
Quantity
Unit Price
5,000+
$0.68
Product Variant Information section