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Infineon | BSC252N10NSFGATMA1

Manufacturer Part #

BSC252N10NSFGATMA1

N-Channel 100 V 2.25 mOhm OptiMOS™2 Power-Transistor - PG-TDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2408
Product Specification Section
Infineon BSC252N10NSFGATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 25.2mΩ
Rated Power Dissipation: 78|W
Qg Gate Charge: 13nC
Mounting Method: Surface Mount
Pricing Section
Global Stock:
30,000
USA:
30,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$2,400.00
USD
Quantity
Unit Price
5,000
$0.48
10,000
$0.475
15,000+
$0.47
Product Variant Information section