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Manufacturer Part #

DMHC3025LSD-13

Dual N/P Channel 30 V 25 mΩ 11.7 nC H-Bridge Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2510
Product Specification Section
Diodes Incorporated DMHC3025LSD-13 - Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
Drain-to-Source Voltage [Vdss]: 30V/-30V
Drain-Source On Resistance-Max: 25mΩ/50mΩ
Rated Power Dissipation: 1.5|W
Qg Gate Charge: 11.7nC/11.4nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Singapore:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$712.50
USD
Quantity
Unit Price
2,500
$0.285
7,500
$0.28
12,500+
$0.275
Product Variant Information section