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Manufacturer Part #
FDD5N60NZTM
FDD5N60 Series 600 V 4 A 2 Ohm SMT N-Channel UniFET-II™ Mosfet - D2PAK-3
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2500 per Reel Package Style:TO-252-3 (DPAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2505 | ||||||||||
onsemi FDD5N60NZTM - Product Specification
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Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FDD5N60NZTM&field4=onsemi&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/fdd5n60nztm-onsemi-1008510
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=FDD5N60NZTM&field4=onsemi&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/fdd5n60nztm-onsemi-1008510
onsemi FDD5N60NZTM - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 2Ω |
| Rated Power Dissipation: | 83W |
| Qg Gate Charge: | 13nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 4A |
| Turn-on Delay Time: | 40ns |
| Turn-off Delay Time: | 80ns |
| Rise Time: | 50ns |
| Fall Time: | 50ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 5V |
| Technology: | Si |
| Height - Max: | 2.39mm |
| Length: | 6.73mm |
| Input Capacitance: | 450pF |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
Features & Applications
The FDD5N60NZTM is a part of FDD5N60 Series 600 V 2 Ω N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
Features:
- RDS(on) = 1.65 ( Typ.)@ VGS = 10 V, ID = 2.0 A
- Low Gate Charge ( Typ. 10nC)
- Low Crss ( Typ. 5 pF)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
- ESD Improved Capability
- RoHS Compliant
Applications:
- High Efficient S.M.P.S
- Active Power factor correction
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount