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Référence fabricant
FDD5N60NZTM
FDD5N60 Series 600 V 4 A 2 Ohm SMT N-Channel UniFET-II™ Mosfet - D2PAK-3
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| Nom du fabricant: | onsemi | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :2500 par Reel Style d'emballage :TO-252-3 (DPAK) Méthode de montage :Surface Mount | ||||||||||
| Code de date: | 2505 | ||||||||||
onsemi FDD5N60NZTM - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=FDD5N60NZTM&field4=onsemi&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/fdd5n60nztm-onsemi-1008510
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=FDD5N60NZTM&field4=onsemi&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/fdd5n60nztm-onsemi-1008510
onsemi FDD5N60NZTM - Caractéristiques techniques
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 2Ω |
| Rated Power Dissipation: | 83W |
| Qg Gate Charge: | 13nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 4A |
| Turn-on Delay Time: | 40ns |
| Turn-off Delay Time: | 80ns |
| Rise Time: | 50ns |
| Fall Time: | 50ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 5V |
| Technology: | Si |
| Height - Max: | 2.39mm |
| Length: | 6.73mm |
| Input Capacitance: | 450pF |
| Style d'emballage : | TO-252-3 (DPAK) |
| Méthode de montage : | Surface Mount |
Fonctionnalités et applications
The FDD5N60NZTM is a part of FDD5N60 Series 600 V 2 Ω N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
Features:
- RDS(on) = 1.65 ( Typ.)@ VGS = 10 V, ID = 2.0 A
- Low Gate Charge ( Typ. 10nC)
- Low Crss ( Typ. 5 pF)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
- ESD Improved Capability
- RoHS Compliant
Applications:
- High Efficient S.M.P.S
- Active Power factor correction
Emballages disponibles
Qté d'emballage(s) :
2500 par Reel
Style d'emballage :
TO-252-3 (DPAK)
Méthode de montage :
Surface Mount