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onsemi | FDP3632

Manufacturer Part #

FDP3632

Single N-Channel 100 V 310 W 110 nC PowerTrench Through Hole Mosfet - TO-220-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
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Product Specification Section
onsemi FDP3632 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.015Ω
Rated Power Dissipation: 310W
Qg Gate Charge: 110nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 12A
Turn-on Delay Time: 30ns
Turn-off Delay Time: 96ns
Rise Time: 39ns
Fall Time: 46ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: PowerTrench
Height - Max: 9.4mm
Length: 10.67mm
Input Capacitance: 6000pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

The FDP series cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance.

The ruggedness that this technology offers, combined with its low package cost, has made the MOSFET universally preferred for all commercial-industrial applications. The robust design is ideal for applications that require large amounts of power.

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
42 Weeks
Minimum Order:
800
Multiple Of:
800
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Total
$2,336.00
USD
Quantity
Unit Price
800
$2.92
1,600
$2.90
2,400+
$2.87
Product Variant Information section