text.skipToContent text.skipToNavigation

Truck-Icon.svg Free shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. FDP51N25

onsemi | FDP51N25

Manufacturer Part #

FDP51N25

N-Channel 250 V 60 mOhm Flange Mount Mosfet - TO-220

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FDP51N25 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 250V
Drain-Source On Resistance-Max: 60mΩ
Rated Power Dissipation: 320|W
Qg Gate Charge: 70nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The FDP51N25 is a N-Channel enhancement mode power field effect transistors are produced using  DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction

Features:

  • 51 A, 250 VRDS(on) = 0.060 mW @ VGS = 10 V
  • Low gate charge ( typical 55 nC)
  • Low Crss ( typical 63 pF)
  • Fast switching
  • Improved dv/dt capability
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,340.00
USD
Quantity
Unit Price
1,000
$1.34
2,000
$1.33
4,000
$1.32
5,000+
$1.31
Product Variant Information section